Central Semiconductor 2N696

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

双极电源

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

60

Maximum Emitter Base Voltage (V)

5

Maximum Base Emitter Saturation Voltage (V)

1.3@15mA@150mA

Maximum Collector-Emitter Saturation Voltage (V)

1.5@15mA@150mA

Maximum Collector Cut-Off Current (nA)

1000

Minimum DC Current Gain

20@150mA@10V

Maximum Power Dissipation (mW)

600

Maximum Transition Frequency (MHz)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Mounting

通孔

Package Height

6.6(Max)

PCB changed

3

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Lead Shape

通孔

Emitter-Base Voltage

5(V)

Operating Temperature Classification

Military

Package Type

TO-39

Transistor Polarity

NPN

Collector-Base Voltage

60(V)

Operating Temp Range

-65C to 200C

Number of Elements

1

Rad Hardened

无

DC Current Gain

20@150MA@10V

包装

Box

零件状态

活跃

类型

NPN

频率

40(MHz)

引脚数量

3

配置

Single

功率耗散

0.6(W)

输出功率

Not Required(W)

直径

9.4(Max)