Central Semiconductor 2N699 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

7 V

Collector-Emitter Saturation Voltage

1.3 V

Maximum DC Collector Current

-

Pd - Power Dissipation

2 W

Gain Bandwidth Product fT

60 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

40 at 150 mA, 10 V

DC Current Gain hFE Max

120 at 150 mA, 10 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N699

包装

Bulk

配置

Single

集电极基极电压(VCBO)

120 V