Central Semiconductor 40250 TIN/LEAD
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- 对比
40250 TIN/LEAD
420-40250 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-66-2
大陆
立即发货

Bipolar Transistors - BJT 50Vcbo 50Vcev 40Vceo 5.0Vebo 29W
1最小包装量--
40250 TIN/LEAD详情
Central Semiconductor 40250 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-66-2
RoHS
N
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
40 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum DC Collector Current
-
Pd - Power Dissipation
29 W
Gain Bandwidth Product fT
-
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
25 at 1.5 A, 4 V
DC Current Gain hFE Max
100 at 1.5 A, 4 V
Factory Pack QuantityFactory Pack Quantity
30
Tradename
0
系列
40250
包装
Tube
配置
Single
集电极基极电压(VCBO)
50 V
连续集电极电流
4 A
40250 TIN/LEAD拓展信息
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哦! 它是空的。