Central Semiconductor BC108B TIN/LEAD

包装/外壳

TO-18-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

25 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

250 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

600 mW

Gain Bandwidth Product fT

150 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 10 uA, 5 V

DC Current Gain hFE Max

450 at 2 mA, 5 V

Factory Pack QuantityFactory Pack Quantity

2000

Tradename

0

系列

BC108

包装

Bulk

配置

Single

集电极基极电压(VCBO)

30 V

连续集电极电流

200 mA