Central Semiconductor BC309B TIN/LEAD
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- 对比
BC309B TIN/LEAD
420-BC309B TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT Through-Hole Transis tor-Small Signal (<
1最小包装量--
BC309B TIN/LEAD详情
Central Semiconductor BC309B TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
25 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
300 mV
Pd - Power Dissipation
500 mW
Gain Bandwidth Product fT
130 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
180 at 5 V, 2 mA
DC Current Gain hFE Max
460 at 5 V, 2 mA
Factory Pack QuantityFactory Pack Quantity
2500
系列
BC309B
包装
Bulk
配置
Single
连续集电极电流
100 mA
BC309B TIN/LEAD拓展信息
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哦! 它是空的。