Central Semiconductor BC337 TIN/LEAD

包装/外壳

TO-92-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

45 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

700 mV

Pd - Power Dissipation

625 mW

Gain Bandwidth Product fT

210 MHz

DC Collector/Base Gain hfe Min

100 at 100 mA, 1 V

DC Current Gain hFE Max

630 at 100 mA, 1 V

Factory Pack QuantityFactory Pack Quantity

2500

Tradename

0

系列

BC337

包装

Bulk

配置

Single

集电极基极电压(VCBO)

50 V

连续集电极电流

800 mA