Central Semiconductor BCY59-IX TIN/LEAD

包装/外壳

TO-18-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

45 V

Emitter- Base Voltage VEBO

7 V

Collector-Emitter Saturation Voltage

350 mV

Maximum DC Collector Current

200 mA

Pd - Power Dissipation

340 mW

Gain Bandwidth Product fT

150 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 10 uA, 5 V

DC Current Gain hFE Max

460 at 2 mA, 5 V

Factory Pack QuantityFactory Pack Quantity

2000

Tradename

0

系列

BCY59

包装

Bulk

配置

Single

集电极基极电压(VCBO)

45 V

连续集电极电流

100 mA