Central Semiconductor BCY78-IX TIN/LEAD
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BCY78-IX TIN/LEAD
420-BCY78-IX TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-18-3
大陆
立即发货

Bipolar Transistors - BJT PNP 32Vcbo 5.0Vebo 100mA 340mW 1W
1最小包装量--
BCY78-IX TIN/LEAD详情
Central Semiconductor BCY78-IX TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-18-3
RoHS
N
Mounting Styles
通孔
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
32 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
250 mV
Maximum DC Collector Current
200 mA
Pd - Power Dissipation
340 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
40
Factory Pack QuantityFactory Pack Quantity
2000
Tradename
0
系列
BCY78
包装
Bulk
配置
Single
集电极基极电压(VCBO)
32 V
连续集电极电流
100 mA
BCY78-IX TIN/LEAD拓展信息
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