Central Semiconductor CDM22012-800LRFP SL PBFREE

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

12 A

Rds On - Drain-Source Resistance

370 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

-

Qg - Gate Charge

52.4 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

40 W

Channel Mode

Enhancement

Tradename

UltraMOS

Factory Pack QuantityFactory Pack Quantity

50

Package Description

,

Manufacturer Part Number

CDM22012-800LRFPSLPBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.67

包装

Tube

Reach合规守则

unknown

通道数量

1 Channel