Central Semiconductor CDM2205-800FP TIN/LEAD

包装/外壳

TO-220FP-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

5 A

Rds On - Drain-Source Resistance

2.7 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

17.4 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

48 W

Channel Mode

Enhancement

Fall Time

30 ns

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

44 ns

Typical Turn-On Delay Time

13 ns

Unit Weight

0.068784 oz

包装

Tube

系列

CDM2205

配置

Single

通道数量

1 Channel

上升时间

27 ns

晶体管类型

1 N-Channel