Central Semiconductor GES6014 TIN/LEAD

包装/外壳

TO-92-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

500 mV

Maximum DC Collector Current

1.5 A

Pd - Power Dissipation

1 W

Gain Bandwidth Product fT

335 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

65 at 10 V, 1 mA

DC Current Gain hFE Max

300 at 1 V, 10 mA

Factory Pack QuantityFactory Pack Quantity

2500

系列

GES60

包装

Bulk

配置

Single

集电极基极电压(VCBO)

70 V

连续集电极电流

800 mA