Central Semiconductor MJE180 TIN/LEAD

包装/外壳

TO-126-3

Tradename

0

Factory Pack QuantityFactory Pack Quantity

1000

DC Current Gain hFE Max

250 at 100 mA, 1 V

DC Collector/Base Gain hfe Min

50 at 100 mA, 1 V

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Gain Bandwidth Product fT

50 MHz

Pd - Power Dissipation

15 W

Maximum DC Collector Current

6 A

Collector-Emitter Saturation Voltage

300 mV

Emitter- Base Voltage VEBO

7 V

Collector- Emitter Voltage VCEO Max

40 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

MJE180

配置

Single

集电极基极电压(VCBO)

60 V

连续集电极电流

3 A