Central Semiconductor MJE2801T PBFREE
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MJE2801T PBFREE
420-MJE2801T PBFREE
晶体管 - 双极性晶体管(BJT)- 单个
TO-220-3
大陆
立即发货

Bipolar Transistors - BJT LEADED POWER TRANSIS GEN PUR T0-220
1最小包装量--
MJE2801T PBFREE详情
Central Semiconductor MJE2801T PBFREE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-220-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
60 V
Emitter- Base Voltage VEBO
-
Collector-Emitter Saturation Voltage
-
Maximum DC Collector Current
10 A
Pd - Power Dissipation
75 W
Gain Bandwidth Product fT
-
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
25 at 3 A
DC Current Gain hFE Max
100 at 3 A
Factory Pack QuantityFactory Pack Quantity
50
Unit Weight
0.067021 oz
系列
MJE2801
包装
Bulk
配置
Single
集电极基极电压(VCBO)
60 V
MJE2801T PBFREE拓展信息
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