Central Semiconductor MPSA20 TIN/LEAD
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- 对比
MPSA20 TIN/LEAD
420-MPSA20 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT 40Vceo 4.0Vebo 100mA 625mW 4pF
1最小包装量--
MPSA20 TIN/LEAD详情
Central Semiconductor MPSA20 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
N
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
40 V
Emitter- Base Voltage VEBO
4 V
Collector-Emitter Saturation Voltage
250 mV
Maximum DC Collector Current
-
Pd - Power Dissipation
625 mW
Gain Bandwidth Product fT
125 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
40 at 5 mA, 10 V
DC Current Gain hFE Max
400 at 5 mA, 10 V
Factory Pack QuantityFactory Pack Quantity
2500
系列
MPSA20
包装
Bulk
配置
Single
集电极基极电压(VCBO)
-
连续集电极电流
100 mA
MPSA20 TIN/LEAD拓展信息
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