Central Semiconductor MPSA56 TIN/LEAD
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- 对比
MPSA56 TIN/LEAD
420-MPSA56 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT 80Vcbo 80Vceo 4.0Vebo 500mA 625mW
1最小包装量--
MPSA56 TIN/LEAD详情
Central Semiconductor MPSA56 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
DC Collector/Base Gain hfe Min
100
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Gain Bandwidth Product fT
50 MHz
Pd - Power Dissipation
625 mW
Maximum DC Collector Current
-
Collector-Emitter Saturation Voltage
250 mV
Emitter- Base Voltage VEBO
4 V
Collector- Emitter Voltage VCEO Max
80 V
Transistor Polarity
PNP
Mounting Styles
通孔
RoHS
N
Factory Pack QuantityFactory Pack Quantity
2500
包装
Bulk
系列
MPSA56
配置
Single
集电极基极电压(VCBO)
80 V
连续集电极电流
500 mA
MPSA56 TIN/LEAD拓展信息
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