Central Semiconductor PMD10K100 TIN/LEAD

包装/外壳

TO-3-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

100 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

2 V

Maximum DC Collector Current

20 A

Pd - Power Dissipation

150 W

Gain Bandwidth Product fT

4 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

1000 at 6 A, 3 V

DC Current Gain hFE Max

20000 at 6 A, 3 V

Factory Pack QuantityFactory Pack Quantity

20

Tradename

0

系列

PMD10K100

包装

Tube

配置

Single

集电极基极电压(VCBO)

100 V

连续集电极电流

12 A