Central Semiconductor PN3563 TIN/LEAD

包装/外壳

TO-92-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

12 V

Emitter- Base Voltage VEBO

2 V

Collector-Emitter Saturation Voltage

-

Maximum DC Collector Current

-

Pd - Power Dissipation

350 mW

Gain Bandwidth Product fT

600 MHz

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

20

DC Current Gain hFE Max

200

Factory Pack QuantityFactory Pack Quantity

2500

Tradename

0

系列

PN3563

包装

Bulk

配置

Single

集电极基极电压(VCBO)

30 V

连续集电极电流

50 mA