Central Semiconductor PN3567 TIN/LEAD
- 收藏
- 对比
PN3567 TIN/LEAD
420-PN3567 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT NPN 80Vcbo 40Vceo 5.0Vebo 500mA 625mW
1最小包装量--
PN3567 TIN/LEAD详情
Central Semiconductor PN3567 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
Tradename
0
Factory Pack QuantityFactory Pack Quantity
2500
DC Collector/Base Gain hfe Min
100 at 30 mA, 1 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Gain Bandwidth Product fT
600 MHz
Pd - Power Dissipation
625 mW
Maximum DC Collector Current
-
Collector-Emitter Saturation Voltage
250 mV
Emitter- Base Voltage VEBO
5 V
Collector- Emitter Voltage VCEO Max
40 V
Transistor Polarity
NPN
Mounting Styles
通孔
RoHS
N
包装
Bulk
系列
PN3567
配置
Single
集电极基极电压(VCBO)
80 V
连续集电极电流
500 mA
PN3567 TIN/LEAD拓展信息
Central Semiconductor
Central Semiconductor
Central Semiconductor Corp
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central Semiconductor







哦! 它是空的。