Central Semiconductor PN4917 TIN/LEAD
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PN4917 TIN/LEAD
420-PN4917 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT PNP 30Vcbo 30Vceo 5.0Vebo 100mA 625mW
1最小包装量--
PN4917 TIN/LEAD详情
Central Semiconductor PN4917 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
Factory Pack QuantityFactory Pack Quantity
2500
Tradename
0
DC Collector/Base Gain hfe Min
100 at 100 uA, 1 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Gain Bandwidth Product fT
450 MHz
Pd - Power Dissipation
1.5 W
Maximum DC Collector Current
-
Collector-Emitter Saturation Voltage
130 mV
Emitter- Base Voltage VEBO
5 V
Collector- Emitter Voltage VCEO Max
30 V
Transistor Polarity
PNP
Mounting Styles
通孔
RoHS
N
包装
Bulk
系列
PN4917
配置
Single
集电极基极电压(VCBO)
30 V
连续集电极电流
100 mA
PN4917 TIN/LEAD拓展信息
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