Central Semiconductor PN5137 TIN/LEAD
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PN5137 TIN/LEAD
420-PN5137 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT NPN 30Vcbo 20Vceo 3.0Vebo 150mA 35pF
1最小包装量--
PN5137 TIN/LEAD详情
Central Semiconductor PN5137 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
20 V
Emitter- Base Voltage VEBO
3 V
Collector-Emitter Saturation Voltage
250 mV
Pd - Power Dissipation
1 W
Gain Bandwidth Product fT
40 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
20 at 1 V, 150 mA
DC Current Gain hFE Max
400 at 1 V, 150 mA
Factory Pack QuantityFactory Pack Quantity
2500
系列
PN5137
包装
Bulk
配置
Single
集电极基极电压(VCBO)
30 V
连续集电极电流
500 mA
PN5137 TIN/LEAD拓展信息
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