Diodes DMT6006LSS-13

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

8-SO

Standard Frequency

75

Operating Temp Range

-40C to 85C

Operating Supply Voltage (Max)

1.98(V)

Operating Supply Voltage (Min)

1.62(V)

Programmable

无

Continuous Drain Current Id

14.6

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.38 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.026455 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

34.9 nC

Rds On - Drain-Source Resistance

6.5 mOhms

Typical Turn-Off Delay Time

20.4 ns

Id - Continuous Drain Current

11.9 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

11.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

1.38W (Ta)

Product Status

活跃

包装

Bulk

操作温度

-55°C ~ 150°C (TJ)

系列

-

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

Si

频率稳定性

±20(ppm)

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

负载电容

15(pF)

功率耗散

2.08

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.5mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

2162 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

34.9 nC @ 10 V

上升时间

5.4 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET