Diodes DMT6012LPSW-13

包装/外壳

PowerDI5060-8

安装类型

Surface Mount, Wettable Flank

供应商器件包装

PowerDI5060-8 (Type UX)

Continuous Drain Current Id

31.5

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

4.4 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

3.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

22.2 nC

Rds On - Drain-Source Resistance

12 mOhms

Typical Turn-Off Delay Time

25.5 ns

Id - Continuous Drain Current

13.1 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

13.1A (Ta), 31.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

3.1W (Ta), 17.9W (Tc)

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

17.9

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

12mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

1522 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

22.2 nC @ 10 V

上升时间

6.7 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET