Diodes DMTH10H017LPDQ-13

包装/外壳

PowerDI5060-8

安装类型

表面贴装

供应商器件包装

PowerDI5060-8 (Type E)

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

9.8 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

28.6 nC

Rds On - Drain-Source Resistance

17.4 mOhms

Typical Turn-Off Delay Time

32.6 ns

Id - Continuous Drain Current

59 A

Package

Tape & Reel (TR)

Base Product Number

DMTH10H017

Current - Continuous Drain (Id) @ 25℃

13A (Ta), 59A (Tc)

厂商

Diodes Incorporated

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

1.5W (Ta), 93W (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

17.4mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 250µA

输入电容(Ciss)(Max)@Vds

1986pF @ 50V

门极电荷(Qg)(最大)@Vgs

28.6nC @ 10V

上升时间

16.3 ns

漏源电压 (Vdss)

100V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET