Diodes Inc. DMN3029LFG-13

底架

表面贴装

包装/外壳

PowerDI3333-8

安装类型

表面贴装

引脚数

8

供应商器件包装

PowerDI3333-8

RoHS

Compliant

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.001058 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

11.3 nC

Rds On - Drain-Source Resistance

18.6 mOhms

Id - Continuous Drain Current

8 A

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.8V @ 250µA

Product Status

活跃

Power Dissipation (Max)

1W (Ta)

厂商

Diodes Incorporated

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

5.3A (Ta)

Package

Tape & Reel (TR)

包装

Tape & Reel (TR)

系列

DMN3029LFG

操作温度

-55°C ~ 150°C (TJ)

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

最大功率耗散

1 W

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

18.6mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

580 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

11.3 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

5.3 A

输入电容

580 pF

场效应管特性

-

最大rds

18.6 mΩ

产品类别

MOSFET

达到SVHC

无SVHC