Diodes Incorporated 2N7000P
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2N7000P
671-2N7000P
晶体管 - FET,MOSFET - 单个
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
1最小包装量--
2N7000P详情
Diodes Incorporated 2N7000P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Package Description
CYLINDRICAL, O-PBCY-W3
Package Style
CYLINDRICAL
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
200 °C
Manufacturer Part Number
2N7000P
Package Shape
ROUND
Manufacturer
Zetex / Diodes Inc
Number of Elements
1
Part Life Cycle Code
Transferred
Ihs Manufacturer
ZETEX PLC
Drain Current-Max (ID)
0.2 A
Risk Rank
5.03
ECCN 代码
EAR99
HTS代码
8541.21.00.95
端子位置
BOTTOM
终端形式
WIRE
Reach合规守则
unknown
JESD-30代码
O-PBCY-W3
资历状况
不合格
配置
SINGLE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
5 Ω
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
反馈上限-最大值 (Crss)
5 pF
2N7000P拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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