Diodes Incorporated DI015N25D1

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

15

Maximum Drain Source Resistance (MOhm)

220@10V

Typical Gate Charge @ Vgs (nC)

8.9@10V

Typical Gate Charge @ 10V (nC)

8.9

Typical Input Capacitance @ Vds (pF)

475@125V

Maximum Power Dissipation (mW)

140000

Typical Fall Time (ns)

2

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

10

Typical Turn-On Delay Time (ns)

4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

Commercial

Mounting

表面贴装

Package Height

2.3

Package Width

6

Package Length

6.6

PCB changed

2

Tab

Tab

Supplier Package

DPAK

包装

卷带

零件状态

活跃

引脚数量

3

配置

Single

信道型

N