Diodes Incorporated DI020N06D1
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DI020N06D1
671-DI020N06D1
晶体管 - FET,MOSFET - 阵列
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DI020N06D1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at utmel
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DI020N06D1详情
Diodes Incorporated DI020N06D1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
20
Maximum Drain Source Resistance (MOhm)
35@10V
Typical Gate Charge @ Vgs (nC)
25.3@10V
Typical Gate Charge @ 10V (nC)
25.3
Typical Input Capacitance @ Vds (pF)
590@15V
Maximum Power Dissipation (mW)
45000
Typical Fall Time (ns)
3
Typical Rise Time (ns)
6
Typical Turn-Off Delay Time (ns)
17
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Height
2.3
Package Width
6
Package Length
6.6
PCB changed
2
Tab
Tab
Supplier Package
DPAK
包装
卷带
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
DI020N06D1拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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