Diodes Incorporated DI030N03D1

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.2

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

14@10V

Typical Gate Charge @ Vgs (nC)

17.5@10V

Typical Gate Charge @ 10V (nC)

17.5

Typical Input Capacitance @ Vds (pF)

940@15V

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

6

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

19

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

Commercial

Mounting

表面贴装

Package Height

2.3

Package Width

6

Package Length

6.6

PCB changed

2

Tab

Tab

Supplier Package

DPAK

包装

卷带

零件状态

活跃

引脚数量

3

配置

Single

信道型

N