Diodes Incorporated DIT095N08
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DIT095N08
671-DIT095N08
晶体管 - FET,MOSFET - 阵列
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DIT095N08 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at utmel
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DIT095N08详情
Diodes Incorporated DIT095N08重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
80
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
95
Maximum Drain Source Resistance (MOhm)
8@10V
Typical Gate Charge @ Vgs (nC)
109@10V
Typical Gate Charge @ 10V (nC)
109
Typical Input Capacitance @ Vds (pF)
6800@25V
Maximum Power Dissipation (mW)
170000
Typical Fall Time (ns)
15
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
56
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Commercial
Mounting
通孔
Package Height
8.7
Package Width
4.5
Package Length
10.1
PCB changed
3
Tab
Tab
Supplier Package
TO-220AB
包装
Tube
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
DIT095N08拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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