Diodes Incorporated DIT100N10

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

100

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

13@10V

Typical Gate Charge @ Vgs (nC)

85@10V

Typical Gate Charge @ 10V (nC)

85

Typical Input Capacitance @ Vds (pF)

4800@50V

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

50

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Temperature Grade

Commercial

Mounting

通孔

Package Height

8.7

Package Width

4.5

Package Length

10.1

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

包装

Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N