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价格梯度
内地含税价
1
¥6.996271
10
¥6.600259
100
¥6.226659
500
¥5.874204
1000
¥5.541699
Diodes Incorporated DMC1018UPDWQ-13
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- 对比
DMC1018UPDWQ-13
671-DMC1018UPDWQ-13
晶体管 - FET,MOSFET - 阵列
8-PowerTDFN
大陆
立即发货

MOSFET BVDSS: 8V~24V POWERDI5060
--最小包装量--
¥
总价: ¥
DMC1018UPDWQ-13详情
Diodes Incorporated DMC1018UPDWQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
PowerDI5060-8 (Type UXD)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Package Type
PowerDI5060-8
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Transistor Polarity
Complementary N and P Channel
Continuous Drain Current Id
31.3A
Vds - Drain-Source Breakdown Voltage
12 V, 20 V
Vgs th - Gate-Source Threshold Voltage
800 mV, 850 mV
Pd - Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V, - 12 V, + 12 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
30.4 nC, 19 nC
Rds On - Drain-Source Resistance
17 mOhms, 53 mOhms
Id - Continuous Drain Current
31.3 A, 20.9 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
技术
Si
引脚数量
8
通道数量
2 Channel
功率 - 最大
2.6W (Ta), 25W (Tc)
场效应管类型
N and P-Channel Complementary
Rds On(Max)@Id,Vgs
17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 250μA
输入电容(Ciss)(Max)@Vds
1525pF @ 6V, 866pF @ 6V
门极电荷(Qg)(最大)@Vgs
30.4nC @ 8V, 19nC @ 8V
漏源电压 (Vdss)
12V, 20V
信道型
N, P
场效应管特性
Standard
DMC1018UPDWQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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