Diodes Incorporated DMG4N60SJ3
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DMG4N60SJ3
671-DMG4N60SJ3
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

MOSFET NCH 600V 3A TO251
1最小包装量--
DMG4N60SJ3详情
Diodes Incorporated DMG4N60SJ3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
底架
通孔
安装类型
通孔
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
Current - Continuous Drain (Id) @ 25℃
3A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
41W Tc
操作温度
-55°C~150°C TJ
包装
Tube
已出版
2016
JESD-609代码
e3
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
未说明
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.5 Ω @ 2A, 10V
不同 Id 时 Vgs(th)(最大值)
4.5V @ 250μA
输入电容(Ciss)(Max)@Vds
532pF @ 25V
门极电荷(Qg)(最大)@Vgs
14.3nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
连续放电电流(ID)
3A
RoHS状态
ROHS3 Compliant
DMG4N60SJ3拓展信息
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