Diodes Incorporated DMN2004VK-7B
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DMN2004VK-7B
671-DMN2004VK-7B
晶体管 - FET,MOSFET - 阵列
SOT-563, SOT-666
大陆
立即发货

MOSFET BVDSS: 8V~24V SOT563 T&R
1最小包装量--
DMN2004VK-7B详情
Diodes Incorporated DMN2004VK-7B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-563, SOT-666
供应商器件包装
SOT-563
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
540mA (Ta)
Continuous Drain Current Id
540mA
Transistor Polarity
N通道
Qualification
-
MSL
MSL 1 - Unlimited
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
8 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
8000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
-
Rds On - Drain-Source Resistance
550 mOhms
Typical Turn-Off Delay Time
53.5 ns
Id - Continuous Drain Current
540 mA
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
功率 - 最大
250mW (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
550mOhm @ 540mA, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
150pF @ 16V
门极电荷(Qg)(最大)@Vgs
-
上升时间
13.3 ns
漏源电压 (Vdss)
20V
产品类别
MOSFET
晶体管类型
2 N-Channel
信道型
N通道
场效应管特性
Standard
产品类别
MOSFET
DMN2004VK-7B拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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