Diodes Incorporated DMN2041UVT-13

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSOT-26

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5.8A (Ta)

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

1.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

9.1 nC

Rds On - Drain-Source Resistance

28 mOhms

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

5.8 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

1.1W

场效应管类型

2 N-Channel (Dual) Common Source

Rds On(Max)@Id,Vgs

28mOhm @ 8.2A, 4.5V

不同 Id 时 Vgs(th)（最大值）

900mV @ 250μA

输入电容(Ciss)(Max)@Vds

689pF @ 10V

门极电荷(Qg)(最大)@Vgs

9.1nC @ 4.5V

上升时间

21 ns

漏源电压 (Vdss)

20V

产品类别

MOSFET

晶体管类型

2 N-Channel

场效应管特性

Standard

产品类别

MOSFET