Diodes Incorporated DMN2053UWQ-7

安装类型

表面贴装

包装/外壳

SC-70, SOT-323

引脚数

3

供应商器件包装

SOT-323

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250μA

厂商

Diodes Incorporated

Power Dissipation (Max)

2.9A (Ta)

Continuous Drain Current Id

2.9

MSL

-

Qualification

AEC-Q101

Channel Mode

Enhancement

Number of Elements per Chip

1

Package Type

SOT-323

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

2.6 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

470 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

3.6 nC

Rds On - Drain-Source Resistance

56 mOhms

Typical Turn-Off Delay Time

12.5 ns

Id - Continuous Drain Current

2.9 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

700

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

56mOhm @ 2A, 4.5V

输入电容(Ciss)(Max)@Vds

369 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

3.6 nC @ 4.5 V

上升时间

3 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET