Diodes Incorporated DMN2055UW-7

安装类型

表面贴装

包装/外壳

SC-70, SOT-323

供应商器件包装

SOT-323

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Power Dissipation (Max)

520mW (Ta)

Continuous Drain Current Id

3.1

Number of Elements per Chip

1

Package Type

SOT-323

Channel Mode

Enhancement

MSL

-

Qualification

-

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

2.8 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

520 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

4.3 nC

Rds On - Drain-Source Resistance

46 mOhms

Typical Turn-Off Delay Time

15.4 ns

Id - Continuous Drain Current

3.1 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

650

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

46mOhm @ 3.6A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 250μA

输入电容(Ciss)(Max)@Vds

400 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

4.3 nC @ 4.5 V

上升时间

2.7 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET