Diodes Incorporated DMN2991UDJ-7
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DMN2991UDJ-7
671-DMN2991UDJ-7
晶体管 - FET,MOSFET - 阵列
SOT-963
大陆
立即发货

MOSFET BVDSS: 8V~24V SOT963 T&R
1最小包装量--
DMN2991UDJ-7详情
Diodes Incorporated DMN2991UDJ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-963
供应商器件包装
SOT-963
厂商
Diodes Incorporated
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
520mA (Ta)
Base Product Number
DMN2991
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
400 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
350 pC
Rds On - Drain-Source Resistance
990 mOhms
Id - Continuous Drain Current
520 mA
系列
-
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
通道数量
2 Channel
功率 - 最大
400mW (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
990mOhm @ 100mA, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
21.5pF @ 15V
门极电荷(Qg)(最大)@Vgs
350pC @ 4.5V
漏源电压 (Vdss)
20V
产品类别
MOSFET
场效应管特性
Standard
产品
MOSFET
产品类别
MOSFET
DMN2991UDJ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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