Diodes Incorporated DMN3190LDWQ-7
- 收藏
- 对比
DMN3190LDWQ-7
671-DMN3190LDWQ-7
晶体管 - FET,MOSFET - 阵列
6-TSSOP, SC-88, SOT-363
大陆
立即发货

MOSFET BVDSS: 25V~30V SOT363 T&R
1最小包装量--
DMN3190LDWQ-7详情
Diodes Incorporated DMN3190LDWQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
供应商器件包装
SOT-363
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
1A (Ta)
Number of Elements per Chip
1
Package Type
SOT-363
Channel Mode
Enhancement
MSL
-
Qualification
AEC-Q101
Transistor Polarity
N通道
Continuous Drain Current Id
1A
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Pd - Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
2 nC
Rds On - Drain-Source Resistance
190 mOhms
Id - Continuous Drain Current
1 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
技术
Si
引脚数量
6
通道数量
2 Channel
功率 - 最大
320mW (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
190mOhm @ 1.3A, 10V
不同 Id 时 Vgs(th)(最大值)
2.8V @ 250μA
输入电容(Ciss)(Max)@Vds
87pF @ 20V
门极电荷(Qg)(最大)@Vgs
2nC @ 10V
漏源电压 (Vdss)
30V
产品类别
MOSFET
信道型
N
场效应管特性
Standard
产品类别
MOSFET
DMN3190LDWQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







哦! 它是空的。