Diodes Incorporated DMN53D0LV-7

安装类型

表面贴装

包装/外壳

SOT-563, SOT-666

供应商器件包装

SOT-563

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

Number of Elements per Chip

2

Package Type

SOT-563

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

350mA

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

30

Rohs Code

有

Manufacturer Part Number

DMN53D0LV-7

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

5.58

Vds - Drain-Source Breakdown Voltage

50 V

Vgs th - Gate-Source Threshold Voltage

800 mV

Pd - Power Dissipation

430 mW

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

600 pC

Rds On - Drain-Source Resistance

1.6 Ohms

Id - Continuous Drain Current

350 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

6

通道数量

2 Channel

功率 - 最大

430mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

1.6Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 250μA

输入电容(Ciss)(Max)@Vds

46pF @ 25V

门极电荷(Qg)(最大)@Vgs

0.6nC @ 4.5V

漏源电压 (Vdss)

50V

产品类别

MOSFET

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET