Diodes Incorporated DMN65D8LV-13

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

SOT-23-3

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Power Dissipation (Max)

370mW (Ta)

Base Product Number

DMN65

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

2.7 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

370 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

870 pC

Rds On - Drain-Source Resistance

3 Ohms

Typical Turn-Off Delay Time

12.6 ns

Id - Continuous Drain Current

310 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3Ohm @ 115mA, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 250μA

输入电容(Ciss)(Max)@Vds

22 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

0.87 nC @ 10 V

上升时间

2.8 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET