Diodes Incorporated DMN66D0LDWQ-7
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DMN66D0LDWQ-7
671-DMN66D0LDWQ-7
晶体管 - FET,MOSFET - 阵列
6-TSSOP, SC-88, SOT-363
大陆
立即发货

MOSFET BVDSS: 41V~60V SOT363 T&R
1最小包装量--
DMN66D0LDWQ-7详情
Diodes Incorporated DMN66D0LDWQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
供应商器件包装
SOT-363
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
115mA (Tc)
Package Type
SOT-363
Channel Mode
Enhancement
Vds - Drain-Source Breakdown Voltage
60 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
400 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
900 pC
Rds On - Drain-Source Resistance
5 Ohms
RoHS
Details
Id - Continuous Drain Current
217 mA
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
技术
Si
引脚数量
6
通道数量
2 Channel
功率 - 最大
400mW (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
6Ohm @ 115mA, 5V
不同 Id 时 Vgs(th)(最大值)
2V @ 250μA
输入电容(Ciss)(Max)@Vds
29.3pF @ 25V
门极电荷(Qg)(最大)@Vgs
0.9nC @ 10V
漏源电压 (Vdss)
60V
产品类别
MOSFET
信道型
N
场效应管特性
Standard
产品
MOSFET
产品类别
MOSFET
DMN66D0LDWQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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