Diodes Incorporated DMN68M7SCT

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

厂商

Diodes Incorporated

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

125W (Tc)

Continuous Drain Current Id

100

Qualification

-

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

68 V

Typical Turn-On Delay Time

6.3 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

72.9 nC

Rds On - Drain-Source Resistance

8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

36 ns

Id - Continuous Drain Current

100 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

125

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 250μA

输入电容(Ciss)(Max)@Vds

4260 pF @ 30 V

上升时间

18 ns

漏源电压 (Vdss)

68 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET