Diodes Incorporated DMP2110UVTQ-13
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DMP2110UVTQ-13
671-DMP2110UVTQ-13
晶体管 - FET,MOSFET - 阵列
SOT-23-6 Thin, TSOT-23-6
大陆
立即发货

MOSFET BVDSS: 8V~24V TSOT26 T&R
1最小包装量--
DMP2110UVTQ-13详情
Diodes Incorporated DMP2110UVTQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
TSOT-26
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
1.8A (Ta)
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
1.8 A
Typical Turn-Off Delay Time
24.5 ns
Rds On - Drain-Source Resistance
150 mOhms
Qg - Gate Charge
6 nC
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Channel Mode
Enhancement
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
10000
Minimum Operating Temperature
- 55 C
Unit Weight
0.000282 oz
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
P-Channel
Pd - Power Dissipation
740 mW
Qualification
AEC-Q101
Vgs th - Gate-Source Threshold Voltage
1 V
Typical Turn-On Delay Time
4 ns
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
功率 - 最大
740mW (Ta)
场效应管类型
2 P-Channel (Dual)
Rds On(Max)@Id,Vgs
150mOhm @ 2.8A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
443pF @ 6V
门极电荷(Qg)(最大)@Vgs
6nC @ 4.5V
上升时间
3.7 ns
漏源电压 (Vdss)
20V
产品类别
MOSFET
晶体管类型
2 P-Channel
场效应管特性
Standard
产品类别
MOSFET
DMP2110UVTQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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