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价格梯度
内地含税价
1
¥8.296859
10
¥7.827228
100
¥7.384177
500
¥6.966206
1000
¥6.571889
Diodes Incorporated DMP3011SFVWQ-7
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- 对比
DMP3011SFVWQ-7
671-DMP3011SFVWQ-7
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET P-CH 30V 11.5A PWRDI3333
--最小包装量--
¥
总价: ¥
DMP3011SFVWQ-7详情
Diodes Incorporated DMP3011SFVWQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
980mW (Ta)
Continuous Drain Current Id
50
Package Type
PowerDI3333-8
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Factory Pack QuantityFactory Pack Quantity
2000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
2.25 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
18 mOhms
Id - Continuous Drain Current
19.8 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
引脚数量
8
通道数量
1 Channel
功率耗散
2.25
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
10mOhm @ 11.5A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
2380 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
产品类别
MOSFET
信道型
P
场效应管特性
-
产品类别
MOSFET
DMP3011SFVWQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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