参数名
参数值
参数名
参数值
包装/外壳
8-PowerVDFN
安装类型
表面贴装
引脚数
8
供应商器件包装
PowerDI3333-8
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
Power Dissipation (Max)
980mW (Ta)
Continuous Drain Current Id
50
Package Type
PowerDI3333-8
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Factory Pack QuantityFactory Pack Quantity
2000
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
2.25 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
18 mOhms
Id - Continuous Drain Current
19.8 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
通道数量
1 Channel
功率耗散
2.25
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
10mOhm @ 11.5A, 10V
输入电容(Ciss)(Max)@Vds
2380 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
产品类别
MOSFET
信道型
P
场效应管特性
-
产品类别
MOSFET