参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SO
厂商
Diodes Incorporated
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.4V @ 250μA
Power Dissipation (Max)
1.2W (Ta)
Continuous Drain Current Id
5.8
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
4.7 ns
Vgs th - Gate-Source Threshold Voltage
2.4 V
Pd - Power Dissipation
1.2 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.026455 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
17.3 nC
Rds On - Drain-Source Resistance
32 mOhms
Typical Turn-Off Delay Time
43 ns
Id - Continuous Drain Current
5.8 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
1.6
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
32mOhm @ 6A, 10V
输入电容(Ciss)(Max)@Vds
969 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
17.3 nC @ 10 V
上升时间
5 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 P-Channel
信道型
P Channel
场效应管特性
-
产品类别
MOSFET