Diodes Incorporated DMT10H009SK3-13

工厂交货时间

22 Weeks

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

表面安装

YES

供应商器件包装

TO-252, (D-Pak)

终端数量

2

晶体管元件材料

SILICON

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

91A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Power Dissipation (Max)

1.7W (Ta)

Base Product Number

DMT10

Continuous Drain Current Id

91

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

8.3 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

1.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

34 nC

Rds On - Drain-Source Resistance

9.1 mOhms

Typical Turn-Off Delay Time

27.6 ns

Id - Continuous Drain Current

91 A

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

DMT10H009SK3-13

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

1.74

Drain Current-Max (ID)

91 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

端子位置

DUAL

终端形式

鸥翼

参考标准

AEC-Q101

JESD-30代码

R-PSSO-G2

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

3.2

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

9.1mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2028 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

34 nC @ 10 V

上升时间

15.9 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-252

最大漏极电流 (Abs) (ID)

91 A

漏极-源极导通最大电阻

0.0091 Ω

脉冲漏极电流-最大值(IDM)

360 A

DS 击穿电压-最小值

100 V

信道型

N通道

雪崩能量等级（Eas）

181 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

3.2 W

场效应管特性

-

反馈上限-最大值 (Crss)

11 pF

产品类别

MOSFET

达到SVHC

unknown