Diodes Incorporated DMT10H025LSS-13

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SO

Power Dissipation (Max)

1.3W (Ta), 12.9W (Tc)

Base Product Number

DMT10

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

7.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3V @ 250μA

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

6.7 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1.3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.026455 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

22.9 nC

Rds On - Drain-Source Resistance

25 mOhms

Typical Turn-Off Delay Time

15.5 ns

Id - Continuous Drain Current

7.1 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

25mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

1639 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

22.9 nC @ 10 V

上升时间

7 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET