Diodes Incorporated DMT4014LDV-7
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DMT4014LDV-7
671-DMT4014LDV-7
晶体管 - FET,MOSFET - 阵列
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 31V~40V POWERDI333
1最小包装量--
DMT4014LDV-7详情
Diodes Incorporated DMT4014LDV-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8 (Type UXC)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
8.5A (Ta), 26.5A (Tc)
Package Type
PowerDI3333-8
Channel Mode
Enhancement
MSL
-
Qualification
-
Transistor Polarity
N通道
Continuous Drain Current Id
26.5A
Factory Pack QuantityFactory Pack Quantity
2000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
2.1 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
11.2 nC
Rds On - Drain-Source Resistance
19 mOhms
Id - Continuous Drain Current
26.5 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
引脚数量
8
通道数量
2 Channel
功率 - 最大
1W (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
19mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
750pF @ 20V
门极电荷(Qg)(最大)@Vgs
11.2nC @ 10V
漏源电压 (Vdss)
40V
产品类别
MOSFET
信道型
N
场效应管特性
Standard
产品类别
MOSFET
DMT4014LDV-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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