Diodes Incorporated DMT61M8SPS-13

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PowerDI5060-8 (Type K)

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

205A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.7W (Ta), 139W (Tc)

Continuous Drain Current Id

205

Number of Elements per Chip

1

Package Type

PowerDI5060-8

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

11.3 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

139 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

130.6 nC

Rds On - Drain-Source Resistance

1.6 mOhms

Typical Turn-Off Delay Time

86.2 ns

Id - Continuous Drain Current

100 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

引脚数量

8

配置

Single

通道数量

1 Channel

功率耗散

139

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.6mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250μA

输入电容(Ciss)(Max)@Vds

8306 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

130.6 nC @ 10 V

上升时间

28.5 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N

场效应管特性

-

产品类别

MOSFET